Physical and electrical properties of a Si3N4 ÕSiÕGaAs metal–insulator–semiconductor structure
نویسندگان
چکیده
We simulated capacitance–voltage (C – V) curves of Si3N4 /GaAs, Si3N4 /Si and also Si3N4 /Semi* ~virtual semiconductor! metal–insulator–semiconductor ~MIS! capacitors and compared them with experimental C – V curves of a Si3N4 /Si/GaAs structure. The experimental C – V curves of the Si3N4 /Si/GaAs MIS capacitors are not in agreement with the simulated C – V curves of the Si3N4 /GaAs and Si3N4 /Si MIS capacitors, but are in agreement with those of the Si3N4 /Semi* MIS capacitors, where Semi* is a virtual semiconductor with ni57310 11 cm or EG50.88 eV. This indicates that the Si3N4 /Si/GaAs structure is somewhat like a narrow band gap material with EG 50.88 eV. The comparison yields strong support for our theoretical energy band of the Si3N4 /Si/GaAs MIS structure based on quantum well confinement. A depletion mode MIS field-effect-transistor ~MISFET! is successfully fabricated with transconductance of 85 mS/mm, and an inversion mode MISFET is fabricated with transconductance of 0.05 mS/mm. The small transconductance for the inversion mode MISFET is ascribed to strong scattering due to confinement of electrons in the Si quantum well. © 2001 American Institute of Physics. @DOI: 10.1063/1.1403683#
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